| PART |
Description |
Maker |
| 2SK2903 2SK2903-01MR |
N-CHANNEL SILICON POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET 50 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAF2015RJ |
Thermal MOS FETs
SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| MP4411 |
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| 2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
|
| RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HAT2165H-EL-E HAT2165H-15 |
55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
Old Company Name in Catalogs and Other Documents
|
Renesas Electronics Corporation
|
| 2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
